SI3861BDV switch equivalent, load switch.
ID (A)
"2.3 "1.9 "1.7
rDS(on) (W)
0.075 @ VIN = 10 V 0.120 @ VIN = 5.0 V 0.145 @ VIN = 4.5 V
D D D D D D D
4.5-V Rated ESD Protected: 3000 V 105-mW Low rDS(on) TrenchF.
The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externall.
The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channe.
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